Phonon-limited electronic transport of two-dimensional ultrawide bandgap material h-BeO
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چکیده
منابع مشابه
Two-dimensional phonon transport in graphene.
Properties of phonons-quanta of the crystal lattice vibrations-in graphene have recently attracted significant attention from the physics and engineering communities. Acoustic phonons are the main heat carriers in graphene near room temperature, while optical phonons are used for counting the number of atomic planes in Raman experiments with few-layer graphene. It was shown both theoretically a...
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Ultrawide-bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices and applications. Because many figures-ofmerit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have potential compelling advantages over their...
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A broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature-dependent carrier transport in doped or gated graphene structures is provided. A salient feature of this review is a critical comparison between carrier transport in graphene and in two-dimensional semiconductor systems (e.g., heterostructures, quantum wells, inversion la...
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The effect of electron-phonon scattering processes on the thermoelectric properties of extrinsic graphene was studied. Electrical and thermal resistivity, as well as the thermopower, were calculated within the Bloch theory approximations. Analytical expressions for the different transport coefficients were obtained from a variational solution of the Boltzmann equation. The phonon-limited electr...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2020
ISSN: 0003-6951,1077-3118
DOI: 10.1063/5.0022426